| PART |
Description |
Maker |
| V436516S04VTG-10PC |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| IBM13T16644NPA |
16M x 64 PC100 SDRAM(1MB PC100 同步动态RAM)
|
IBM Microeletronics
|
| M366S1723DTS-L7C M366S1723DTS M366S1723DTS-C M366S |
PC133/PC100 Unbuffered DIMM PC133/PC100无缓冲DIMM
16Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYS72V16201GR-8 HYS72V32200GR-8 HYS72V32201GR-8 HY |
PC100 Registered SDRAM-Module(PC100 用于寄存SDRAM 模块) 注册PC100的内存模块（PC100的用于寄存的内存模块
x72 SDRAM Module x72内存模块
|
SIEMENS AG
|
| KMM366S163BT-GL KMM366S1623BT KMM366S163BT-GB KMM3 |
PC100 SDRAM module. 100 MHz, 10 ns speed
DIODE, ZENER, 6.8V, 5%, 1/2W, MLL34&
DIODE ZENER 6.2V 0.5W 5% IZT=20MA DO-2
PC100 SDRAM module. 125 MHz, 8 ns speed
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470T6464AZ3 M470T5669AZ0-CLE6_D5_CC M470T2864AZ3- |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| M470T6464AZ3-CLE6_D5_CC M470T5669AZ0-CLE6/D5/CC M4 |
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb A-die 64-bit Non-ECC
|
Samsung semiconductor
|
| KMM374S403CT |
PC100 SDRAM MODULE
|
Samsung semiconductor
|
| KMM366S1623CTY-GL KMM366S1623CTY KMM366S1623CTY-GH |
PC100 SDRAM MODULE
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM464S1724T1 |
PC100 144pin SDRAM SODIMM
|
Samsung Semiconductor
|
